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| Datasheet File OCR Text: |
| PROCESS General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip CPD05 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 50 x 50 MILS 9.5 MILS 34 x 34 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N3611 thru 1N3614 1N4001 thru 1N4007 1N4245 thru 1N4249 1N5059 thru 1N5062 1N5391 thru 1N5399 1N5614 thru 1N5622 CMR1-02 Series CMR1-02M Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) Central TM PROCESS CPD05 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) |
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